The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Mar. 13, 1997
Applicant:
Inventors:
Ying-Chen Chao, Hsin-Chu, TW;
Ting-Hwang Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-8 ; 438-9 ; 438720 ; 438963 ;
Abstract
An improved method for selecting etch endpoint when dry etching conductive material layers for use in semiconductor device circuits has been created. The more precise endpoint selection procedure produces metallization patterns which are free from residues (resulting from under-etching) and free from sidewall attack and/or pattern degradation (resulting from over-etching). The method avoids costly and time consuming pre-sorting of substrates according to product pattern density.