The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Aug. 13, 1996
Yong-Jun Hu, Boise, ID (US);
Pai-Hung Pan, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A novel compound PVD target material, suitable for use in the fabrication of cobalt silicide layers on semiconductor devices is disclosed. The compound material is formed by blending an amount of SiO.sub.z with an amount of CoSi.sub.x to form a blended compound material CoSi.sub.x O.sub.y and then compressing and shaping said blended compound material in a hot powder press into an appropriate shape for use in a PVD sputtering chamber. A polysilicon MOSFET gate stack structure and a source/drain salicide structure incorporating the CoSi.sub.X O.sub.y, compound material are described. The addition of a small amount of oxide to the cobalt silicide, when sputter deposited, results in an as-deposited film of CoSi.sub.x O.sub.y having smaller grain size and significantly enhanced thermal stability over conventional CoSi.sub.x, and other characteristics desirable in the fabrication of salicide MOSFET structures.