The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1998
Filed:
Mar. 15, 1995
Eiichi Kawamura, Kawasaki, JP;
Teruyoshi Yao, Kawasaki, JP;
Nobuhisa Naori, Kawasaki, JP;
Koichi Hashimoto, Kawasaki, JP;
Masaharu Kobayashi, Kawasaki, JP;
Tadasi Oshima, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor device including the steps of: forming a transparent oxide film on a light reflecting surface; forming an anti-reflective a-c film on the surface of the transparent film; and coating a photoresist film on the surface of the anti-reflective film and patterning the photoresist film, wherein the thicknesses of the anti-reflective film and the transparent film are selected so as to set a standing wave intensity I.sub.sw =I.delta./I.sub.ave to 0.2 or smaller, where I.sub.ave is an average value of light intensity in the photoresist film, and I.delta. is an amplitude of a light intensity change. A fine pattern can be formed on a highly reflective substrate with a small size variation and at a high precision.