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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5747379 B1

PDFFull Text
Date of Patent:
May. 05, 1998

Filed:

Jun. 03, 1997

Method of fabricating seamless tungsten plug employing tungsten

Applicant:
Inventors:

Yuan-Chang Huang, Hsin-Chu, TW;

Kuan-Hui Chang, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorneys:

Saile; George O.

Ackerman; Stephen B.

Primary Examiner:

T N Quach

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438586 ; 438627 ; 438629 ; 438648 ; 438672 ;
Abstract

A process has been developed in which seamless tungsten plugs are used to fill deep, narrow contact holes. The process features initially forming a tungsten plug in a contact hole, via tungsten LPCVD processing, followed by an RIE etch back, and recessing process. A second tungsten LPCVD procedure is then used to fill seams or defects in the underlying tungsten plug. Another RIE etch back procedure is then employed to create a seamless, composite tungsten plug structure, in the deep, narrow contact hole.

Find Patent Forward Citations

Huang, Yuan-Chang. (1998). Method of fabricating seamless tungsten plug employing tungsten (U.S. Patent No. 5747379). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5747379

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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