The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Jun. 17, 1996
Hitoshi Habuka, Maebashi, JP;
Masanori Mayuzumi, Annaka, JP;
Shin-Etsu Handotai, Co., Ltd., Tokyo, JP;
Abstract
A method of producing a high-quality single crystal thin film in which a temperature of a semiconductor single crystal substrate is raised or lowered in a short time with no occurrence of slippage in the substrate. In a cold-wall type reaction vessel, a substrate is placed on a holder which has no heating capability in the reaction vessel and a thin film is grown on the substrate, while a reaction gas is fed to flow in one direction through the reaction vessel, and at the same time, a temperature profile on the substrate along the flow direction of the reaction gas is adjusted to be uniform by a spatially controlled heating energy distribution and/or with the help of an auxiliary heating region provided at an upstream part of the substrate.