The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1998
Filed:
Jan. 13, 1997
Applicant:
Inventor:
Wen-Jye Chung, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430 30 ;
Abstract
A mask is provided, for positive resists, that includes an opaque area and a partially transparent area, there being a straight line boundary between the two. The feature to be photocleaved is a clear area located midway between these areas so that it is bisected by the boundary. For negative resists, the mask includes a clear area and a partially transparent area, the feature to be photocleaved now being an opaque area. The photoresist (positive or negative) is first given a normal dose of actinic radiation, directed through the mask and is developed. After development has been performed, a photocleaved structure results.