The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Apr. 03, 1996
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B32B / ; B32B / ;
U.S. Cl.
CPC ...
257758 ; 257751 ; 257915 ; 437190 ; 428332 ; 428688 ; 428704 ; 428650 ; 428660 ;
Abstract
A method of manufacture of a semiconductor device on a silicon semiconductor substrate comprises formation of a first stress layer on the semiconductor substrate, formation of an interconnect layer over the first stress layer, formation of a second stress layer on the interconnect layer, formation of an inter-metal dielectric (IMD) layer over the second stress layer, patterning and etching a via opening through the inter-metal dielectric layer and the second stress layer exposing a contact area on the surface of the metal interconnect layer, and heating the device at a temperature sufficient to squeeze the metal interconnect layer up into the via.