The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Jun. 10, 1994
Applicant:
Inventors:
Sheng Teng Hsu, Vancouver, WA (US);
Tatsuo Nakato, Vancouver, WA (US);
Assignees:
Sharp Microelectronics Technology, Inc., Cupertino, CA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 55 ; 257 63 ; 257 65 ; 257 66 ;
Abstract
A Ge--Si MOS transistor for high speed, high density applications in which a thin layer of silicon (Si) is doped to have a concentration of germanium (Ge) ions which is preferably between 10 and 30%. The germanium doped silicon is formed on a layer or substrate of insulator. Optional silicidation of the drain and source regions improves conductivity therein and the use of shallow SIMOX processing technologies results in a more cost-effective and rapid fabrication process.