The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 1998
Filed:
Sep. 29, 1995
Applicant:
Inventors:
Peter K Moon, Portland, OR (US);
Berni W Landau, Beaverton, OR (US);
David T Krick, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438424 ; 438435 ; 438437 ; 438296 ; 148D / ;
Abstract
A method of forming a trench isolation region. The method of the present invention comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant comprising HF. The opening is then oxidized a second time.
Published as:
WO9714175A2; AU7370296A; US5719085A; EP0856197A2; TW353215B; KR19990063841A; HK1015541A1; JPH11513538A; EP0856197A4; KR100316221B1; IL123750A; EP0856197B1; DE69638085D1; JP4553410B2;