The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 1998

Filed:

Oct. 19, 1995
Applicant:
Inventors:

Ming-Dou Ker, Hsin-Chu, TW;

Chung-Yu Wu, Hsin-Chu, TW;

Chien-Chang Huang, Changhua, TW;

Chau-Neng Wu, Kaohsiung Hsien, TW;

Ta-Lee Yu, Hsin-Chu Hsien, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257360 ; 257401 ;
Abstract

The present invention is an electronic device, and more particularly an MOS transistor. A square-type layout style is used to realize the MOS device. By using the present layout style, the output driving/sinking capability of output buffers as well as the ESD protection capability of NMOS and PMOS devices in output buffers or input ESD protection circuits are significantly improved within smaller layout area. Both drain diffusion area and drain-to-bulk parasitic capacitance at the output node are reduced by this square-type layout. Devices using the present layout style can be assembled to form larger, rectangular (or square) and similarly functioning devices. Thus, the present square-type layout style is very attractive to submicron CMOS VLSI/ULSI in high-density and high-speed applications.


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