The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 03, 1998

Filed:

Dec. 05, 1995
Applicant:
Inventors:

Ichiro Hazeyama, Tokyo, JP;

Kazuhiro Ikuina, Tokyo, JP;

Mitsuru Kimura, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ; C04B / ;
U.S. Cl.
CPC ...
264675 ; 264650 ; 264681 ; 501154 ;
Abstract

A process for producing a silica sintered product for a multi-layer wiring substrate of the invention includes: providing a fine silica powder having an average particle size of 5 to 500 nm and a fine crystallized quartz powder having an average particle size 1 to 10 .mu.m, the fine crystallized quartz powder having a volume equal to 1 to 20% of the entire volume of the fine silica powder and the fine crystallized quartz powder; mixing the fine silica powder and the fine crystallized quartz powder with a binder and a solvent to form a silica-containing slurry; forming a green sheet by slip-casting the silica-containing slurry; and firing the green sheet at a temperature of 800.degree. to 1200.degree. C. in an atmosphere containing steam at a partial pressure of 0.005 to 0.85 atm.


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