The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 1997
Filed:
May. 08, 1996
Saied N Tehrani, Tempe, AZ (US);
Eugene Chen, Gilbert, AZ (US);
Mark Durlam, Chandler, AZ (US);
Xiaodong T Zhu, Chandler, AZ (US);
Motorola, Schaumburg, IL (US);
Abstract
A method for detecting and storing four states contained in a MRAM cell having two layers (11,13) which have different thicknesses is provided. A first magnetic field is applied to the MRAM cell, which causes a magnetoresistive change in the MRAM cell. A first and second states are detected based on the magnetoresistive change. A second magnetic field is further applied to the MRAM cell. A third and fourth states are detected based on the magnetoresistive change due to the second magnetic field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile