The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Jul. 15, 1996
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438230 ; 438551 ;
Abstract
The problem of how to prevent trapping charge during high energy ion implantation, as part of a PLDD, NLDD, PS/D, and NS/D manufacturing process, has been solved through use of a protective cap of photoresist which is applied to the gate prior to the high energy ion implantation. Said protective cap is readily removed after ion implantation.
Published as: