The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 1997
Filed:
Mar. 12, 1996
Applicant:
Inventor:
Ming-Hua Liu, Tai-Chung, TW;
Assignee:
United Microelectronics Corp., Taiwan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437 27 ; 437 41 ;
Abstract
A lightly doped drain (LDD) metal oxide semiconductor field effect transistor (MOSFET). Field oxide is used as a hard mask for a total-overlap polysilicon (TOP) gate which minimizes hot-carrier degradation, so that a soft-mask step is saved. The field oxide is used also as a hard mask for surface counter-doping which reduces gate-induced drain leakage, and in making a punch-through stop which reduces drain-induced barrier low and short channel effect.