The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 1997
Filed:
Jan. 08, 1996
Donald L Westmoreland, Boise, ID (US);
Brenda D Wanner, Meridian, ID (US);
David R Atwell, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A chemical vapor deposition method of providing a layer of material atop a semiconductor substrate using an organometallic or metal-organic precursor in a manner which minimizes carbon incorporation in the layer includes, a) positioning a substrate within a chemical vapor deposition reactor; b) providing a gaseous precursor within the reactor having the substrate positioned therein, the precursor comprising one or a combination of tetrakisdimethylamidotitanium, cyclopentadienylcycloheptatrienyltitanium (CpTiCht), bis(2,4-dimethyl-1,3-pentadienyl)titanium (BDPT), and biscyclopentadienyltitanium diazide (Cp.sub.2 Ti(N.sub.3).sub.2); c) exposing the gaseous precursor to high intensity light within the reactor effective to dissociate titanium from the precursor; and d) exposing the substrate to the light exposed gaseous precursor to cause a layer comprising titanium of the precursor to be deposited thereon, the deposited layer having reduced carbon incorporation over what would otherwise be provided under the same deposition conditions but without high intensity light exposure.