The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 1997

Filed:

Sep. 14, 1994
Applicant:
Inventors:

Tateo Ohhashi, Kitaibaraka, JP;

Hideaki Fukuyo, Kitaibaraka, JP;

Ichiroh Sawamura, Kitaibaraka, JP;

Kenichirou Nakamura, Kitaibaraka, JP;

Atsushi Fukushima, Kitaibaraka, JP;

Masaru Nagasawa, Kitaibaraka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20429812 ; 20429813 ; 428652 ; 428660 ; 428662 ; 428663 ; 428661 ; 428673 ; 428680 ; 428674 ;
Abstract

A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.


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