The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 1997

Filed:

Aug. 29, 1996
Applicant:
Inventors:

Bo-Jeih Cheng, Hsin-Chu, TW;

Chang Fu, Hsin-Chu, TW;

Jen Song Liu, Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437247 ; 437194 ; 437240 ; 437982 ;
Abstract

A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.


Find Patent Forward Citations

Cheng, Bo-Jeih. (1997). Method of forming a metal contact to a novel polysilicon contact (U.S. Patent No. 5691250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5691250

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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