The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 1997
Filed:
Jun. 07, 1996
Chia-Shiung Tsai, Shuang-Hsi, TW;
Sung-Mu Hsu, I-Lan, TW;
Taiwan Semiconductor Manufacturing Company Ltd, Hsin-Chu, TW;
Abstract
A method for plasma hardening a patterned photoresist layer. There is first provided a semiconductor substrate which has formed upon its surface a patterned photoresist layer. The patterned photoresist layer is then exposed to a hydrogen containing plasma for a time sufficient to harden the patterned photoresist layer against a Reactive Ion Etch (RIE) etch plasma to which the patterned photoresist layer is later exposed. A blanket layer residing beneath the plasma hardened photoresist layer may then be patterned through the Reactive Ion Etch (RIE) etch plasma without softening, erosion and/or consumption of the plasma hardened patterned photoresist layer.