The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 1997
Filed:
Dec. 05, 1994
Kawasaki Steel Corporation, Hyogo-ken, JP;
Abstract
An antifuse element for a semiconductor device, comprising a bottom electrode made from a conductive material containing a refractory metal and a top electrode made from a conductive material containing a fusible metal. The fusible metal is Al, Al alloy, Cu or Ag. The Al alloy contains at least Si, Cu, Sc, Pd, Ti, Ta or Nb. The refractory metal is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo or W. Silicides are most preferable as the refractory metal. The semiconductor device is programmed by making the top electrode negative or positive and by applying a breakdown voltage between the bottom and top electrodes so as to break down an antifuse material layer, thereby obtaining a filament. The filament is made from the fusible metal from the top electrode and the refractory metal from the bottom electrode. Thus, the filament has a low resistance, and a good EM resistance.