The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 1997

Filed:

Aug. 15, 1995
Applicant:
Inventors:

Hans Loschner, Vienna, AT;

Feng Shi, Kassel, DE;

Ivaylo W Rangelow, Baunatal, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430311 ; 430313 ; 430314 ; 1566281 ; 1566431 ; 1566571 ; 1566621 ;
Abstract

A silicon membrane for use as a micromechanical sensor or as a mask for projection lithography is fabricated by doping a silicon wafer to different thicknesses at different portions and then electrochemically etching away the undoped portion of the wafer.


Find Patent Forward Citations

Loschner, Hans. (1997). Silicon membrane and method of making same (U.S. Patent No. 5672449). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5672449

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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