The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 1997
Filed:
Oct. 09, 1996
Applicant:
Inventors:
Ching-Fa Yeh, Hsinchu, TW;
Jyh-Nan Jeng, Hsinchu, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438158 ; 438787 ;
Abstract
A polysilicon transistor having a buried-gate structure is fabricated by a method involving a liquid phase deposition which is used for depositing selectively a silicon dioxide layer on a polysilicon layer, but not on a photoresist layer. The silicon dioxide liquid phase deposition is brought about by using an aqueous hydrofluorosilicic acid (H.sub.2 SiF.sub.6) solution supersaturated with silicon dioxide. Upon completion of the stripping of the photoresist layer, the selectively-deposited silicon dioxide layer is used as a mask to perform the source/drain ion implant.