The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 1997
Filed:
Mar. 04, 1996
Herbert Ho, Washingtonville, NY (US);
Radhika Srinivasan, Wappingers Falls, NY (US);
Scott D Halle, Hopewell Junction, NY (US);
Erwin Hammerl, Stormville, NY (US);
David M Dobuzinsky, Hopewell Junction, NY (US);
Jack A Mandelman, Stormville, NY (US);
Mark Anthony Jaso, Yorktown Heights, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A simplified method of fabricating a storage node for a deep trench-based DRAM on a semiconductor substrate. The method involves the etching a trench in a surface of the substrate and then forming a layer of dielectric material on a sidewall of the trench the top portion of which is subsequently removed from the sidewall. Next, a layer of oxide is grown on the exposed portion of the sidewall. A portion of this layer of oxide is then removed from the sidewall in order to orient the layer of oxide a predetermined distance from the surface of the substrate. Finally, the trench is filled with a semiconductive material.