The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 1997
Filed:
Nov. 03, 1995
Applicant:
Inventors:
Ronald A Weimer, Boise, ID (US);
Randhir P Thakur, Boise, ID (US);
Avishai Kepten, Migdal Haemek, IL;
Michael Sendler, Migdal Haemek, IL;
Assignee:
Micron Technologies, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117103 ; 117 84 ; 117 95 ;
Abstract
A method of forming HSG is disclosed, in which a layer of starting material is formed on a wafer, the layer of starting material is seeded with a species and the seeded layer is annealed. The seeding and annealing steps can be performed under different conditions and can be varied independently of each other.
Weimer, Ronald. (1997). Method for forming hemispherical grained silicon (U.S. Patent No. 5634974). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5634974
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile