The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 1997
Filed:
Aug. 19, 1996
Yeow M Teo, Singapore, SG;
Kah S Seah, Singapore, SG;
Lap Chan, Singapore, SG;
Che-Chia Wei, Singapore, SG;
Chartered Semiconductor Manufacturing Pte LTD, Singapore, SG;
Abstract
A method for producing an interconnect on a semiconductor device has silicon containing conductive surfaces and dielectric surfaces. The process includes forming separate regions of a blanket first refractory metal silicide on the silicon containing conductive surfaces, the first refractory metal silicide being composed of a first refractory metal and silicon from the surfaces, forming a blanket second refractory metal layer over the device, forming a blanket .alpha.-Si layer over the second refractory metal layer, forming a mask over the device to pattern an interconnect between the separate regions, then etching away the unwanted portions of the refractory metal layers and the .alpha.-Si layer, performing a rapid thermal annealing process on the device forming a low resistance refractory metal silicide between the .alpha.-Si layer and the second refractory metal layer, and then etching away the unwanted portions of the refractory metal layers that are not covered by the refractory metal silicide.