The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 1997
Filed:
Apr. 22, 1996
Applicant:
Inventors:
Ying-Chem Chao, Ming-Hsiang, TW;
Chin-Heng Shen, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-9 ; 438462 ; 438941 ; 438637 ;
Abstract
A process has been developed in which photoresist thinning at the edges of silicon chips, resulting from photoresist flowing from semiconductor chips, exhibiting features with raised topographies, to flat scribe regions, has been reduced. The reduction in photoresist flowing has been accomplished by creating a chessboard pattern of raised insulator and metal features, in the scribe line region, thus reducing the differences in topography between the scribe line and chip regions. The areas between the raised mesas, in the scribe line regions, are used for laser or optical endpoint detection of RIE processes.