The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 1997
Filed:
Jun. 02, 1995
Applicant:
Inventors:
Hiroyuki Ohta, Ibaraki-ken, JP;
Hideo Miura, Koshigaya, JP;
Hiroo Masuda, Tokyo, JP;
Yoichi Tamaki, Kokubunji, JP;
Takahide Ikeda, Tokorozawa, JP;
Asao Nishimura, Ushiku, JP;
Takashi Hashimoto, Ome, JP;
Assignee:
Hitachi, Ltd., , JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257692 ; 257690 ; 257693 ;
Abstract
A bipolar device having a level difference between the contact area level of a base electrode and a base region in a silicon substrate, and the contact area level of an emitter electrode and an emitter region in the silicon substrate in the range of 0.03 .mu.m to 0.1 .mu.m by removing undesirable impurities from the emitter region and a predetermined horizontal distance between a sidewall and a device isolation film does not generate dislocation and show good electric characteristics.