The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 1997
Filed:
Feb. 21, 1995
Fumio Murooka, Atsugi, JP;
Tetsuo Asaba, Atsugi, JP;
Shigeyuki Matsumoto, Atsugi, JP;
Osamu Ikeda, Tokyo, JP;
Toshihiko Ichise, Kawasaki, JP;
Yukihiko Sakashita, Isehara, JP;
Shunsuke Inoue, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.