The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 1997
Filed:
Aug. 24, 1995
Jengping Lin, Tayuan Village, TW;
Sun-Chieh Chien, Hsin-chu, TW;
United Microelectronics Corporation, Hsin-chu, TW;
Abstract
A process for manufacturing an LDD type of FET, based on the salicide process, is described. Said process does not lead to short circuits between the drain region and and the main body of the FET through the buried contact. The process is based on the use of Liquid Phase Deposition (LPD) as the method for growing the oxide layer from which the spacers are formed. Since oxide layers formed through LPD will deposit preferentially on silicon and silicon oxide surfaces relative to photoresist surfaces, the areas in which the LPD layer forms are readily controlled. This feature allows the buried contact layer to be replaced by an extended drain region which can be connected to other parts of the integrated circuit (by the salicide process) without the danger of shorting paths being formed therein.