The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Mar. 24, 1995
Fernando Gonzalez, Boise, ID (US);
Angus C Fox, III, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The present invention is a process for forming diffusion areas and field isolation regions on a silicon substrate, by the steps of: growing a field oxide layer on the surface of the substrate; forming a mask pattern which exposes a plurality of spaced-apart regions on the surface of the field oxide layer; removing portions of the field oxide layer in the exposed, spaced-apart regions with an anisotropic etch so as to leave a cavity in each spaced-apart region, each cavity having as its floor an exposed region of the silicon substrate, and having vertical walls of field oxide; angularly chamfering the rim of each cavity with a facet etch; and filling each cavity with silicon using selective epitaxial growth, and using the floor of each cavity as the seed crystal for such growth.