The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
Sep. 06, 1995
Hiroshi Takeno, Annaka, JP;
Ryoji Hoshi, Annaka, JP;
Satoshi Ushio, Annaka, JP;
Takao Takenaka, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
According to the invention, it is sought to provide a method of evaluating single crystal of silicon, which permits determination of the amount of precipitated oxygen of even a sample having been heat treated and with unknown initial interstitial oxygen concentration. X-rays radiated from X-ray source 7 is converted by slit 6 into a thin, parallel incident X-ray beam 3 to be incident on sample single crystal 1. After adjusting the angle .theta.1 of sample with respect to the incident X-ray beam such as to satisfy Bragg conditions, diffracted X-rays 4 produced by diffraction on the sample single crystal 1 are coupled from the back side thereof through X-ray receiving slit 8 to scintillator 5 for intensity measurement. The amount of precipitated oxygen is calculated from the measured diffracted X-ray intensity.