The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 1996
Filed:
Feb. 12, 1996
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 48 ; 437 52 ; 437 45 ;
Abstract
A method of fabricating memory cells with buried bit lines. In this method, a pad oxide layer is formed on a first conductivity-type silicon substrate. A photoresist layer is formed on the pad oxide layer while exposing predetermined areas of channels. A thick oxide layer is deposited by liquid phase deposition (LPD). The photoresist layer is removed. Second conductivity-type impurities are implanted to form source-drain electrodes using the thick oxide layer as a mask. The thick oxide layer and the pad oxide layer are removed to form bit lines and then word lines are formed crossing the bit lines, whereby the structure with buried bit lines and an array of memory cells is completed.