The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 1996
Filed:
Sep. 12, 1994
Applicant:
Inventors:
Liu Lianjun, Singapore, SG;
Ron-Fu Chu, Singapore, SG;
Assignee:
Chartered Semiconductor Manufacturing Pte Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566511 ; 1566461 ; 216 77 ;
Abstract
A method for dry etching metal films, specifically aluminum, is described. This process uses photoresist as a mask with a gas mixture of BCl3, Cl2 and N2 used for the RIE. The addition of specific amounts of N2 to the etching chemistry results in non-tapered or non-undercut aluminum shapes. These desired shapes are attributed to the creation of polymer on the sidewall of the aluminum during the etching procedure, thus protecting against the isotropic components of RIE process, which cause the tapering. This RIE process can also be conducted at high enough temperatures, needed to avoid deleterious microloading effects.