The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 1996
Filed:
Apr. 18, 1995
Tyler A Lowrey, Boise, ID (US);
Randal W Chance, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A bipolar transistor and a bipolar diode are provided at an input pad on an integrated circuit, in order to shunt potential surges caused by electrostatic discharge (ESD). The approach makes use of a bipolar and a diode clamp with an optimized reverse biased breakdown from collector to base to shunt excess current away from sensitive regions with even current distribution for minimal damage. In order to improve the ESD immunity of the positive going ESD with respect to V.sub.SS, the reverse bias breakdowns of the diode and of the transistor's functioning as a collector/base diode are reduced. This circuit provides a simple low cost approach for improving ESD protection, in a process which fits into most standard Cmos process flows with few or no added process steps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile