The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1996
Filed:
Jun. 07, 1995
Applicant:
Inventors:
Sadasivam Chandrasekhar, Chesterfield, MO (US);
Kyong-Min Kim, St. Charles, MO (US);
Assignee:
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423348 ; 117 14 ; 117201 ; 117202 ; 117932 ; 252 / ; 423349 ;
Abstract
A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.