The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 1996
Filed:
May. 15, 1995
Akihiko Ohsaki, Hyogo, JP;
Sumio Yamaguchi, Hyogo, JP;
Atsushi Ishii, Hyogo, JP;
Kazuyoshi Maekawa, Hyogo, JP;
Masahiko Fujisawa, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device comprising conductors electrically connected through a contact hole interlayer insulation layer with a trilayer barrier layer comprising a titanium silicide layer, titanium silicide layer formed on the titanium silicide by collimation sputtering, and a thermally nitrided titanium formed on the titanium nitride layer. The use of a trilayer barrier layer enables through the capacity of the collimation sputtering apparatus to be increased, prevents particles from occurring, and formation of a low resistance electrical connection between conductors, in addition to preventing diffusion from the titanium nitride layer and the second titanium layer to the thermally nitrided titanium layer, and between conductors.