The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 1996

Filed:

Nov. 04, 1994
Applicant:
Inventors:

Keisuke Tsudaka, Kanagawa, JP;

Minoru Sugawara, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430 22 ; 430311 ; 430312 ; 430315 ;
Abstract

A photomask, a method of producing the same, a method of exposing using the same and a method of manufacturing a semiconductor device using the same are disclosed, which permit correlation to be found out with respect to a large number of mask condition parameters, thus permitting optimum condition to be obtained such as to be less aloof from the actual process, permits quantitative grasping of performance, permits reduction of time and cost, and permits effects of mask pattern size fluctuations, etc. into considerations. Either defocus latitude, mask pattern size latitude II and exposure latitude I is combined with pluralities of data in predetermined ranges of the other two latitudes I and II to determine the permissible range of the first-noted latitude III for optimum value determination.


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