The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 1996

Filed:

May. 09, 1994
Applicant:
Inventors:

Hiroaki Saeki, Yamanashi-ken, JP;

Masaki Kondo, Kofu, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324765 ;
Abstract

According to the present invention, there are provided a self-bias measurement method of measuring the self-bias voltage of an object when the object is subjected to a plasma process by using a plasma generated between a pair of electrodes, the object being held, by means of electrostatic chucking means having an electrostatic chucking electrode, on one of the pair of electrodes situated in a processing chamber, the method including the steps of detecting a leak current between the object and the electrostatic chucking electrode while varying the DC voltage applied to the electrostatic chucking electrode, and calculating the self-bias voltage of the object on the basis of the leak current detected, an apparatus for measuring the self-bias, and an electrostatic chucking apparatus having means capable of measuring the self-bias.


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