The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Apr. 04, 1995
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437190 ; 437192 ; 437228 ; 437247 ;
Abstract
A process for preventing the formation of precipitates on a substrate surface containing titanium after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. With the invention, the precursor are removed by baking the substrate at a temperature of approximately 120.degree. C. for approximately 80 seconds. Preferably, the baking process is performed in situ by a halogen lamp mounted on the exit loading dock of the etcher thereby not impacting the wafer throughput of the etcher.