The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Mar. 16, 1995
Applicant:
Inventors:
Yuan-Chang Huang, Hsin-Chu, TW;
Kuang-Hui Chang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566251 ; 1566341 ; 1566431 ; 216107 ; 216109 ;
Abstract
A process for preventing the formation of precipitates on a substrate surface after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. In one embodiment of the invention, the precursors are removed after etching contact layer by rinsing the substrate in water at about 30.degree. C. for about 10 minutes. In a second embodiment of the invention, the precursors are removed by baking the substrate at a temperature of approximately 120.degree. C. for approximately 180 seconds.