The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 1996
Filed:
Mar. 04, 1994
Issei Imahashi, Yamanashi-ken, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma process apparatus includes a high-vacuum container in which a semiconductor wafer is horizontally mounted on a susceptor, and into which a process gas such as an etching gas is supplied. Between the susceptor and the container a high-frequency voltage is applied. Around the outer periphery of the container, four high-frequency coils are arranged at given intervals in a circumferential direction. The coils apply a high-frequency power having phase difference of .pi./2 between the adjacent coils, into the container, so that a high-frequency rotating electromagnetic field rotating on a horizontal plane is formed in the container thereby generating a plasma of the process gas. The surface of the semiconductor wafer is processed by the plasma.