The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 1996
Filed:
Oct. 27, 1994
Bich-Yen Nguyen, Austin, TX (US);
Marius Orlowski, Austin, TX (US);
Philip J Tobin, Austin, TX (US);
Jim Hayden, Austin, TX (US);
Jack Higman, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A monolithic semiconductor body (26) resides in an opening (16) formed in an insulating layer (14). The monolithic semiconductor body (26) includes an elongated region (20) filling the opening (16) in the insulating layer (14) and contacting a semiconductor region (12). The monolithic semiconductor body (26) further includes a surface region (24) overlying the elongated region (20) and a portion of the surface (22) of the insulating layer (14) adjacent to the opening (16). The monolithic semiconductor body (26) is fabricated by first depositing a layer of semiconductor material into the opening (16), then planarizing the surface of the insulating layer (14). Next, a selective deposition process is carried out to form the surface region (24) using the semiconductor material in the opening (16) as a nucleation site. The radius of curvature of the surface region (24) is determined by the amount of controlled overgrowth during the selective deposition process.