The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1996
Filed:
Jun. 22, 1994
Applicant:
Inventors:
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437235 ; 148D / ; 148D / ; 437238 ;
Abstract
A method of fabricating a semiconductor device includes the steps of forming a wiring layer on the surface of a semiconductor substrate, depositing a silicone film on the whole surface of the semiconductor substrate including the wiring layer by a CVD method and exposing the silicone film to oxidative plasma with enhanced frequencies including components of 1 MHz or less to change to a silicon oxide film, the depositing step and exposing step being alternately repeated in the same apparatus till the silicon oxide film having any desired thickness is obtained. The resulting silicon oxide film has the smooth surface and the high density.