The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1996
Filed:
Apr. 03, 1995
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437190 ; 437192 ; 437228 ; 437246 ;
Abstract
A process for preventing the formation of precipitates on a substrate surface containing Ti (e.g., TiN) after a contact layer (e.g., tungsten layer) etch back. The process involves treating the wafer with an oxygen plasma etch after the tungsten etch back to remove the precursors of a precipitate. The oxygen plasma etch is performed at temperature of about 260.degree. C. and a pressure about 4 torr.