The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 1996
Filed:
Nov. 10, 1994
Applicant:
Inventor:
Tatsuo Nakato, Vancouver, WA (US);
Assignees:
Sharp Microelectronics Technology, Inc., Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257396 ; 257611 ; 257617 ; 257639 ; 257649 ;
Abstract
A graduated concentration profile is used for defining a buried isolation region in a semiconductor device. Smaller concentrations of dielectric-defining particles are used for implantation at the deepest levels of the isolation region in order to reduce the defect density in an overlying epi layer.
Nakato, Tatsuo. (1996). Graded implantation of oxygen and/or nitrogen constituents to define (U.S. Patent No. 5514897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5514897
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile