The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 1996

Filed:

Jun. 07, 1994
Applicant:
Inventors:

Hiroaki Niino, Nagahama, JP;

Tetsuya Takei, Nagahama, JP;

Masahiro Kanai, Hikone, JP;

Ryuji Okamura, Shiga, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
1187 / ; 118718 ; 118719 ; 1187 / ; 1187 / ;
Abstract

An apparatus for continuously forming a functional deposited film on a continuously moving web member by microwave plasma CVD process, said apparatus comprises: a substantially enclosed columnar film-forming chamber having a curved circumferential wall formed by curving and projecting said web member as said web member is moving in the longitudinal direction by curved portion-forming means, said film-forming chamber having a film-forming space defined by a curved moving web member constituting said circumferential in which plasma is generated; at least a microwave applicator means capable of radiating a microwave energy in the direction of microwave to propagate, said microwave applicator means being mounted to said film forming chamber through one of the two side faces thereof such that part of said microwave applicator means is plunged into said film-forming space, at least said part of microwave applicator means having a dielectric exterior constituted by a dielectric material having a value of 2.times.10.sup.-2 or less in the product of the dielectric constant (.epsilon.) and the dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;means for evacuating said film-forming chamber; means for introducing a film-forming raw material gas into said film-forming chamber; and a temperature controlling means.


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