The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 1996
Filed:
Oct. 05, 1994
Applicant:
Inventors:
Hong-Tsz Pan, Chang-Hua, TW;
Ming-Tzong Yang, Hsin Chu, TW;
Assignee:
United Microelectronics Corporation, Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430321 ; 430324 ; 216 51 ; 216 46 ;
Abstract
This invention describes the use and methods of fabrication of a double destruction phase shift mask. The double destruction phase shift mask combines transparent phase shifting regions and attenuating phase shifting regions to form interference patterns in light projected through the mask which reduce the light intensity to nearly zero in the regions of the projected light corresponding to pattern elements. This eliminates the ghost line which can occur with conventional phase shifting masks. The double destruction phase shift mask provides improved depth of focus and edge definition.