The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 1996
Filed:
May. 25, 1995
Sun-Chieh Chien, Hsin-Chu, TW;
Jengping Lin, Tayuan Village, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A structure and method is provided for forming a contact plug in a contact hole in a dielectric layer on a semiconductor substrate. A polysilicon spacer is formed on the sidewalls and bottom of the contact hole. A metal, such as titanium, is deposited on the sidewalls and bottom of the hole and on the dielectric layer. The substrate is heated to form a metal silicide layer, such as TiSi.sub.x, and a metal nitride layer, such as TiN, on the side-walls and bottom of the contact hole. Any remaining metal layer and metal nitride layer formed in the heating process is removed. This leaves the titanium silicide layer on the contact hole walls. Tungsten is deposited to fill the contact hole where the metal silicide promotes the nucleation of the tungsten. In a preferred embodiment, to further promote nucleation of the tungsten, a second metal nitride layer is formed on the surface; of the metal silicide layer just prior to tungsten deposition.