The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1996
Filed:
Sep. 30, 1994
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device including forming an electrode on a part of a semiconductor substrate, depositing an insulating film on the semiconductor substrate and on the electrode, and forming a contact hole penetrating through the insulating film to expose a part of the electrode; forming a barrier metal layer on the electrode in the contact hole, on the internal side surface of the contact hole, and on the surface of the insulating film; and depositing a metal layer on the barrier metal layer and patterning the metal layer and the barrier metal layer to form a wiring layer wherein the barrier metal layer comprises a metal that does not form an intermetallic material by solid state diffusion with either of the electrode and the metal layer even at elevated temperatures.