The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 1996
Filed:
Apr. 04, 1995
Alcan-Tech Co., Inc., all of, JP;
Semiconductor Process Laboratory Co., Ltd., all of, JP;
Canon Sales Co., Inc., all of, JP;
Abstract
The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.