The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 1995

Filed:

May. 26, 1994
Applicant:
Inventors:

Water Lur, Taipei, TW;

Jiun Y Wu, Yun-Lin Hsien, TW;

Assignee:

United Microelectronics Corp., Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 69 ; 437 70 ; 148D / ;
Abstract

A method of forming field oxides with curvilinear boundaries between active regions on a substrate in an integrated circuit (IC) so that the stresses induced in the active regions due to the formation of field oxide can be reduced. Problems like junction leakage are reduced due to the rounded boundaries of the field oxides.


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